IRFB3306GPBF

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Current Continuous Drain Id25

120A Tc

Rds On Max Id Vgs

4.2m Ω @ 75A, 10V

Rise Time

76ns

Montaj

Through Hole

Pulsed Drain Currentmax Idm

620A

Pin Sayısı

3

Continuous Drain Current Id

160A

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Number Of Elements

1

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

230W Tc

Nominal Vgs

4 V

Seri

HEXFET®

Yayın Yılı

2009

Vgsth Max Id

4V @ 150μA

Terminal Sayısı

3

Kılıf / Paket

TO-220-3

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate Charge Qg Max Vgs

120nC @ 10V

Turn Off Delay Time

40 ns

Drain To Source Breakdown Voltage

60V

Input Capacitance Ciss Max Vds

4520pF @ 50V

Gate To Source Voltage Vgs

20V

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Through Hole

Case Connection

DRAIN

Yükseklik

16.51mm

Turn On Delay Time

15 ns

Element Configuration

Single

Transistor Element Material

SILICON

Parça Durumu

Not For New Designs

Vgs Max

±20V

Uzunluk

10.668mm