IRFB3207ZPBF

Specifications

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Genişlik

4.82mm

Kurşunsuz

Lead Free

Fabrika Tedarik Süresi

12 Weeks

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Active

Montaj Tipi

Through Hole

Fet Type

N-Channel

Drain To Source Breakdown Voltage

75V

Direnç

4.1MOhm

Turn Off Delay Time

55 ns

Gate Charge Qg Max Vgs

170nC @ 10V

Kılıf / Paket

TO-220-3

Vgsth Max Id

4V @ 150μA

Seri

HEXFET®

Number Of Elements

1

Ambalaj

Tube

Pulsed Drain Currentmax Idm

670A

Transistor Application

SWITCHING

Rds On Max Id Vgs

4.1m Ω @ 75A, 10V

Current Continuous Drain Id25

120A Tc

Contact Plating

Tin

Terminal

Through Hole

Radyasyon Dayanımı

No

Power Dissipation

300mW

Dual Supply Voltage

75V

Uzunluk

10.66mm

Turn On Delay Time

20 ns

Element Configuration

Single

Case Connection

DRAIN

Yükseklik

9.017mm

Drive Voltage Max Rds On Min Rds On

10V

Input Capacitance Ciss Max Vds

6920pF @ 50V

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~175°C TJ

Voltage Rated Dc

75V

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3