IRFB3207ZGPBF

Specifications

Jedec95 Code

TO-220AB

Power Dissipation

300W

ECCN Kodu

EAR99

Kurşunsuz

Lead Free

Genişlik

4.826mm

Fall Time Typ

68 ns

Vgs Max

±20V

Uzunluk

10.668mm

Transistor Element Material

SILICON

Parça Durumu

Not For New Designs

Turn On Delay Time

20 ns

Element Configuration

Single

Case Connection

DRAIN

Yükseklik

16.51mm

Montaj Tipi

Through Hole

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Input Capacitance Ciss Max Vds

6920pF @ 50V

Drain To Source Breakdown Voltage

75V

Direnç

4.1MOhm

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

55 ns

Gate Charge Qg Max Vgs

170nC @ 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-220-3

Terminal Sayısı

3

Threshold Voltage

4V

Vgsth Max Id

4V @ 150μA

Seri

HEXFET®

Yayın Yılı

2001

Ambalaj

Tube

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

300W Tc

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

670A

Pin Sayısı

3

Continuous Drain Current Id

210A