Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 210A
- Pin Sayısı
- 3
- Pulsed Drain Currentmax Idm
- 840A
- Montaj
- Through Hole
- Rise Time
- 82ns
- Rds On Max Id Vgs
- 3m Ω @ 75A, 10V
- Current Continuous Drain Id25
- 120A Tc
- Transistor Application
- SWITCHING
- Radyasyon Dayanımı
- No
- Drain Currentmax Abs Id
- 120A
- Gate To Source Voltage Vgs
- 20V
- Direnç
- 3MOhm
- Input Capacitance Ciss Max Vds
- 6540pF @ 50V
- Drain To Source Breakdown Voltage
- 60V
- Gate Charge Qg Max Vgs
- 170nC @ 10V
- Turn Off Delay Time
- 55 ns
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- TO-220-3
- Terminal Sayısı
- 3
- Vgsth Max Id
- 4V @ 150μA
- Yayın Yılı
- 2009
- Seri
- HEXFET®
- Power Dissipation Max
- 300W Tc
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 1
- Ambalaj
- Tube
- Uzunluk
- 10.668mm
- Vgs Max
- ±20V
- Parça Durumu
- Not For New Designs
- Transistor Element Material
- SILICON
- Element Configuration
- Single
- Turn On Delay Time
- 19 ns
- Yükseklik
- 16.51mm
- Case Connection
- DRAIN
- Montaj Tipi
- Through Hole
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fet Type
- N-Channel
- Avalanche Energy Rating Eas
- 170 mJ
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