IRFB3006PBF

Specifications

Kurşunsuz

Lead Free

Drainsource On Resistancemax

0.0025Ohm

Genişlik

4.826mm

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

Power Dissipation

375W

Fall Time Typ

189 ns

Fabrika Tedarik Süresi

12 Weeks

Uzunluk

10.668mm

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Yükseklik

9.02mm

Case Connection

DRAIN

Element Configuration

Single

Turn On Delay Time

16 ns

Avalanche Energy Rating Eas

320 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Through Hole

Turn Off Delay Time

118 ns

Gate Charge Qg Max Vgs

300nC @ 10V

Gate To Source Voltage Vgs

20V

Drain To Source Breakdown Voltage

60V

Input Capacitance Ciss Max Vds

8970pF @ 50V

Kılıf / Paket

TO-220-3

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Yayın Yılı

2008

Seri

HEXFET®

Threshold Voltage

3V

Vgsth Max Id

4V @ 250μA

Jesd30 Code

R-PSFM-T3

Reach Svhc

No SVHC

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

375W Tc

Number Of Elements

1

Ambalaj

Tube

Continuous Drain Current Id

270A