IRFB3006GPBF

Specifications

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Montaj Tipi

Through Hole

Case Connection

DRAIN

Yükseklik

16.51mm

Turn On Delay Time

16 ns

Element Configuration

Single

Transistor Element Material

SILICON

Parça Durumu

Not For New Designs

Vgs Max

±20V

Uzunluk

10.668mm

Fabrika Tedarik Süresi

16 Weeks

Fall Time Typ

189 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Lead Free

Genişlik

4.826mm

Drainsource On Resistancemax

0.0025Ohm

Power Dissipation

375W

Jedec95 Code

TO-220AB

ECCN Kodu

EAR99

Drain Currentmax Abs Id

195A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Current Continuous Drain Id25

195A Tc

Rds On Max Id Vgs

2.5m Ω @ 170A, 10V

Rise Time

182ns

Montaj

Through Hole

Pulsed Drain Currentmax Idm

1080A

Continuous Drain Current Id

270mA

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Ambalaj

Tube

Power Dissipation Max

375W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

HEXFET®

Yayın Yılı

2009

Vgsth Max Id

4V @ 250μA

RoHS Durumu

ROHS3 Compliant