Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2008
- Seri
- HEXFET®
- Threshold Voltage
- 4V
- Vgsth Max Id
- 4V @ 250μA
- Reach Svhc
- No SVHC
- Power Dissipation Max
- 380W Tc
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 1
- Ambalaj
- Tube
- Gate Charge Qg Max Vgs
- 240nC @ 10V
- Turn Off Delay Time
- 90 ns
- Gate To Source Voltage Vgs
- 20V
- Direnç
- 1.75MOhm
- Input Capacitance Ciss Max Vds
- 9200pF @ 25V
- Drain To Source Breakdown Voltage
- 40V
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- TO-220-3
- Terminal Sayısı
- 3
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Contact Plating
- Tin
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Continuous Drain Current Id
- 340A
- Operating Mode
- ENHANCEMENT MODE
- Current Continuous Drain Id25
- 195A Tc
- Rds On Max Id Vgs
- 1.75m Ω @ 195A, 10V
- Montaj
- Through Hole
- Rise Time
- 220ns
- Transistor Application
- SWITCHING
- Fall Time Typ
- 130 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- Genişlik
- 4.826mm
- Kurşunsuz
- Lead Free
- ECCN Kodu
- EAR99
- Power Dissipation
- 380W
- Jedec95 Code
- TO-220AB
- Yükseklik
- 9.017mm
- Case Connection
- DRAIN
- Element Configuration
- Single
- Turn On Delay Time
- 23 ns
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