IRFB23N20DPBF

Specifications

Montaj

Through Hole

Rise Time

32ns

Pin Sayısı

3

Continuous Drain Current Id

24A

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

3.8W Ta 170W Tc

Yayın Yılı

2000

Nominal Vgs

5.5 V

Threshold Voltage

5.5V

Akım Değeri

24A

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Voltage Rated Dc

200V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

30V

Input Capacitance Ciss Max Vds

1960pF @ 25V

Avalanche Energy Rating Eas

250 mJ

Drive Voltage Max Rds On Min Rds On

10V

Yükseklik

4.69mm

Case Connection

DRAIN

Element Configuration

Single

Turn On Delay Time

14 ns

Uzunluk

10.54mm

Dual Supply Voltage

200V

Power Dissipation

170W

Radyasyon Dayanımı

No

Terminal

Through Hole

Contact Plating

Tin

Current Continuous Drain Id25

24A Tc

Rds On Max Id Vgs

100m Ω @ 14A, 10V

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

96A

Ambalaj

Tube

Number Of Elements

1

Seri

HEXFET®

Vgsth Max Id

5.5V @ 250μA

Kılıf / Paket

TO-220-3

Turn Off Delay Time

26 ns