IRFB23N15DPBF

Specifications

Power Dissipation

3.8W

Dual Supply Voltage

150V

Uzunluk

10.5156mm

Element Configuration

Single

Turn On Delay Time

10 ns

Yükseklik

15.24mm

Case Connection

DRAIN

Avalanche Energy Rating Eas

260 mJ

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

30V

Input Capacitance Ciss Max Vds

1200pF @ 25V

Voltage Rated Dc

150V

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Threshold Voltage

5.5V

Akım Değeri

23A

Yayın Yılı

2000

Nominal Vgs

5.5 V

Power Dissipation Max

3.8W Ta 136W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Continuous Drain Current Id

23A

Montaj

Through Hole

Rise Time

32ns

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

Kurşunsuz

Contains Lead, Lead Free

Genişlik

4.69mm

Fall Time Typ

8.4 ns

Fabrika Tedarik Süresi

14 Weeks

Vgs Max

±30V

Parça Durumu

Not For New Designs

Transistor Element Material

SILICON

Montaj Tipi

Through Hole

Fet Type

N-Channel

Direnç

90mOhm

Drain To Source Breakdown Voltage

150V