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Specifications
- Seri
- HEXFET®
- Vgsth Max Id
- 4V @ 250μA
- Ambalaj
- Tube
- Number Of Elements
- 1
- Turn Off Delay Time
- 30 ns
- Gate Charge Qg Max Vgs
- 35nC @ 10V
- Direnç
- 100mOhm
- Drain To Source Breakdown Voltage
- -55V
- Kılıf / Paket
- TO-220-3
- Terminal
- Through Hole
- Contact Plating
- Tin
- Radyasyon Dayanımı
- No
- Tepe Reflow Süresi (maks. sn)
- 30
- Pulsed Drain Currentmax Idm
- 68A
- Rds On Max Id Vgs
- 100m Ω @ 10A, 10V
- Current Continuous Drain Id25
- 19A Tc
- Transistor Application
- SWITCHING
- Fall Time Typ
- 41 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- Kurşunsuz
- Lead Free
- Genişlik
- 4.69mm
- Tepe Reflow Sıcaklığı (°C)
- 250
- ECCN Kodu
- EAR99
- Jedec95 Code
- TO-220AB
- Fet Type
- P-Channel
- Montaj Tipi
- Through Hole
- Vgs Max
- ±20V
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Yayın Yılı
- 1997
- Nominal Vgs
- -4 V
- Recovery Time
- 82 ns
- Drain To Source Voltage Vdss
- 55V
- Threshold Voltage
- -4V
- Akım Değeri
- -19A
- Reach Svhc
- No SVHC
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Dissipation Max
- 68W Tc
- JESD-609 Kodu
- e3
- Gate To Source Voltage Vgs
- 20V
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