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Specifications
- Current Continuous Drain Id25
- 23A Tc
- Rds On Max Id Vgs
- 117m Ω @ 14A, 10V
- Transistor Application
- SWITCHING
- Gerilim
- 100V
- Contact Plating
- Tin
- Terminal
- SMD/SMT
- Tepe Reflow Süresi (maks. sn)
- 30
- Radyasyon Dayanımı
- No
- Direnç
- 117mOhm
- Drain To Source Breakdown Voltage
- -100V
- Turn Off Delay Time
- 40 ns
- Gate Charge Qg Max Vgs
- 110nC @ 10V
- Number Of Channels
- 1
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgsth Max Id
- 4V @ 250μA
- Seri
- HEXFET®
- Ambalaj
- Tape & Reel (TR)
- Number Of Elements
- 1
- Jesd30 Code
- R-PSSO-G2
- Vgs Max
- ±20V
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Montaj Tipi
- Surface Mount
- Fet Type
- P-Channel
- ECCN Kodu
- EAR99
- Kurşunsuz
- Contains Lead
- Genişlik
- 9.65mm
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fall Time Typ
- 51 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- -23A
- Pin Sayısı
- 3
- Rise Time
- 67ns
- Montaj
- Surface Mount
- Gate To Source Voltage Vgs
- 20V
- Input Capacitance Ciss Max Vds
- 1450pF @ 25V
- Terminal Formu
- GULL WING
- Voltage Rated Dc
- -100V
- Max Junction Temperature Tj
- 150°C
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