IRF9392TRPBF

Specifications

ECCN Kodu

EAR99

Power Dissipation

2.5W

Fabrika Tedarik Süresi

17 Weeks

Fall Time Typ

58 ns

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Vgs Max

±25V

Montaj Tipi

Surface Mount

Fet Type

P-Channel

Drive Voltage Max Rds On Min Rds On

10V 20V

Element Configuration

Single

Turn On Delay Time

15 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

8

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

25V

Input Capacitance Ciss Max Vds

1270pF @ 25V

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

-30V

Gate Charge Qg Max Vgs

14nC @ 4.5V

Turn Off Delay Time

73 ns

Terminal Kaplaması

Matte Tin (Sn)

Power Dissipation Max

2.5W Ta

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Pozisyonu

DUAL

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Number Of Elements

1

Drain To Source Voltage Vdss

30V

Vgsth Max Id

2.4V @ 25μA

Yayın Yılı

2010

Seri

HEXFET®

Rds On Max Id Vgs

12.1m Ω @ 7.8A, 20V

Rise Time

47ns

Montaj

Surface Mount

Current Continuous Drain Id25

9.8A Ta

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

9.8A