IRF9388TRPBF

Specifications

Pulsed Drain Currentmax Idm

96A

Continuous Drain Current Id

12A

Pin Sayısı

8

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Current Continuous Drain Id25

12A Ta

Rds On Max Id Vgs

8.5m Ω @ 12A, 20V

Rise Time

57ns

Montaj

Surface Mount

Radyasyon Dayanımı

No

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

52nC @ 10V

Turn Off Delay Time

80 ns

Drain To Source Breakdown Voltage

-30V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

1680pF @ 25V

Gate To Source Voltage Vgs

25V

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Terminal Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

HEXFET®

Yayın Yılı

2005

Drain To Source Voltage Vdss

30V

Vgsth Max Id

2.4V @ 25μA

Threshold Voltage

-1.8V

Reach Svhc

No SVHC

Terminal Pozisyonu

DUAL

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2.5W Ta

Vgs Max

±25V

Transistor Element Material

SILICON

Parça Durumu

Active

Yükseklik

1.4986mm

Turn On Delay Time

19 ns

Element Configuration

Single

Fet Type

P-Channel