Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Pozisyonu
- DUAL
- Ambalaj
- Tape & Reel (TR)
- Number Of Elements
- 1
- Vgsth Max Id
- 2.4V @ 25μA
- Seri
- HEXFET®
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Direnç
- 19.4MOhm
- Drain To Source Breakdown Voltage
- -30V
- Gate Charge Qg Max Vgs
- 38nC @ 10V
- Turn Off Delay Time
- 55 ns
- Radyasyon Dayanımı
- No
- Current Continuous Drain Id25
- 9.2A Ta
- Rds On Max Id Vgs
- 19.4m Ω @ 9.2A, 10V
- Transistor Application
- SWITCHING
- Pulsed Drain Currentmax Idm
- 75A
- Fabrika Tedarik Süresi
- 12 Weeks
- Fall Time Typ
- 49 ns
- ECCN Kodu
- EAR99
- Genişlik
- 3.9878mm
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Surface Mount
- Fet Type
- P-Channel
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Vgs Max
- ±20V
- Power Dissipation Max
- 2.5W Ta
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Reach Svhc
- No SVHC
- Drain To Source Voltage Vdss
- 30V
- Threshold Voltage
- -1.8V
- Yayın Yılı
- 2010
- Nominal Vgs
- -1.8 V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 8
- Gate To Source Voltage Vgs
- 20V
- Input Capacitance Ciss Max Vds
- 1110pF @ 25V
- Terminal Formu
- GULL WING
- Montaj
- Surface Mount
- Rise Time
- 44ns
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