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Specifications
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 7.2m Ω @ 15A, 10V
- Current Continuous Drain Id25
- 15A Ta
- Transistor Application
- SWITCHING
- Vgsth Max Id
- 2.4V @ 50μA
- Seri
- HEXFET®
- Ambalaj
- Tape & Reel (TR)
- Number Of Elements
- 1
- Terminal Pozisyonu
- DUAL
- Direnç
- 7.2MOhm
- Drain To Source Breakdown Voltage
- -30V
- Gate Charge Qg Max Vgs
- 98nC @ 10V
- Turn Off Delay Time
- 185 ns
- Number Of Channels
- 1
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Montaj Tipi
- Surface Mount
- Fet Type
- P-Channel
- Vgs Max
- ±20V
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Fall Time Typ
- 145 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- ECCN Kodu
- EAR99
- Genişlik
- 3.9878mm
- Kurşunsuz
- Lead Free
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- -15A
- Pin Sayısı
- 8
- Montaj
- Surface Mount
- Rise Time
- 79ns
- Drain To Source Voltage Vdss
- 30V
- Threshold Voltage
- -1.8V
- Yayın Yılı
- 2008
- Nominal Vgs
- -1.8 V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Dissipation Max
- 2.5W Ta
- JESD-609 Kodu
- e3
- Reach Svhc
- No SVHC
- Gate To Source Voltage Vgs
- 20V
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