IRF8714GTRPBF

Specifications

Seri

HEXFET®

Yayın Yılı

2009

Vgsth Max Id

2.35V @ 25μA

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

2.5W Ta

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

12nC @ 4.5V

Turn Off Delay Time

11 ns

Input Capacitance Ciss Max Vds

1020pF @ 15V

Drain To Source Breakdown Voltage

30V

Gate To Source Voltage Vgs

20V

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Çalışma Sıcaklığı

-55°C~150°C TJ

Radyasyon Dayanımı

No

Pin Sayısı

8

Continuous Drain Current Id

14A

Operating Mode

ENHANCEMENT MODE

Montaj

Surface Mount

Rise Time

9.9ns

Rds On Max Id Vgs

8.7m Ω @ 14A, 10V

Current Continuous Drain Id25

14A Ta

Fall Time Typ

5 ns

Fabrika Tedarik Süresi

12 Weeks

Genişlik

3.9878mm

Power Dissipation

2.5W

ECCN Kodu

EAR99

Configuration

Single

Yükseklik

1.4986mm

Turn On Delay Time

10 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Vgs Max

±20V

Uzunluk

4.9784mm

Parça Durumu

Obsolete