IRF8304MTRPBF

Specifications

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

DirectFET™ Isometric MX

Çalışma Sıcaklığı

-40°C~150°C TJ

Turn Off Delay Time

19 ns

Gate Charge Qg Max Vgs

42nC @ 4.5V

Drain To Source Breakdown Voltage

30V

Input Capacitance Ciss Max Vds

4700pF @ 15V

Gate To Source Voltage Vgs

20V

Reach Svhc

No SVHC

Ambalaj

Tape & Reel (TR)

Rds On Max

2.2 mΩ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2.8W Ta 100W Tc

Nominal Vgs

1.8 V

Seri

HEXFET®

Yayın Yılı

2013

Drain To Source Voltage Vdss

30V

Vgsth Max Id

2.35V @ 100μA

Maks. Çalışma Sıcaklığı

150°C

Input Capacitance

4.7nF

Current Continuous Drain Id25

28A Ta 170A Tc

Montaj

Surface Mount

Rise Time

22ns

Rds On Max Id Vgs

2.2mOhm @ 28A, 10V

Tedarikçi Cihaz Paketi

DIRECTFET™ MX

Continuous Drain Current Id

28A

Pin Sayısı

7

Radyasyon Dayanımı

No

Power Dissipation

100W

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

13 ns

Parça Durumu

Active

Drain To Source Resistance

3.2mOhm

Vgs Max

±20V

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Montaj Tipi

Surface Mount

Min. Çalışma Sıcaklığı

-40°C

Turn On Delay Time

16 ns