IRF8252PBF

Specifications

Drain Currentmax Abs Id

25A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

200A

Operating Mode

ENHANCEMENT MODE

Qualification Status

Not Qualified

Ds Breakdown Voltagemin

25V

Transistor Application

SWITCHING

Rds On Max Id Vgs

2.7m Ω @ 25A, 10V

Current Continuous Drain Id25

25A Ta

Seri

HEXFET®

Yayın Yılı

2004

Vgsth Max Id

2.35V @ 100μA

Drain To Source Voltage Vdss

25V

REACH Uyumluluk Kodu

compliant

Jesd30 Code

R-PDSO-G8

Number Of Elements

1

Ambalaj

Tube

Terminal Pozisyonu

DUAL

Power Dissipation Max

2.5W Ta

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

53nC @ 4.5V

Input Capacitance Ciss Max Vds

5305pF @ 13V

Terminal Formu

GULL WING

Terminal Sayısı

8

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

RoHS Durumu

RoHS Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

231 mJ

Montaj Tipi

Surface Mount

Vgs Max

±20V

Transistor Element Material

SILICON

Yüzey Montaj

YES

Parça Durumu

Obsolete

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.0027Ohm

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE