Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Seri
- HEXFET®
- Vgsth Max Id
- 4V @ 250μA
- Ambalaj
- Tube
- Number Of Elements
- 1
- Turn Off Delay Time
- 61 ns
- Gate Charge Qg Max Vgs
- 120nC @ 10V
- Drain To Source Breakdown Voltage
- 100V
- Direnç
- 15Ohm
- Kılıf / Paket
- TO-220-3
- Contact Plating
- Tin
- Radyasyon Dayanımı
- No
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 80A Tc
- Rds On Max Id Vgs
- 15m Ω @ 45A, 10V
- Fall Time Typ
- 120 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- Genişlik
- 4.69mm
- Kurşunsuz
- Lead Free
- Jedec95 Code
- TO-220AB
- ECCN Kodu
- EAR99
- Fet Type
- N-Channel
- Montaj Tipi
- Through Hole
- Vgs Max
- ±20V
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Nominal Vgs
- 4 V
- Yayın Yılı
- 2002
- Recovery Time
- 150 ns
- Threshold Voltage
- 4V
- Akım Değeri
- 80A
- Reach Svhc
- No SVHC
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Dissipation Max
- 260W Tc
- Input Capacitance Ciss Max Vds
- 3830pF @ 25V
- Gate To Source Voltage Vgs
- 20V
- Terminal Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Voltage Rated Dc
- 100V
- Drain Currentmax Abs Id
- 75A
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