IRF7946TR1PBF

Specifications

Yayın Yılı

2013

Seri

HEXFET®, StrongIRFET™

Nominal Vgs

3 V

Threshold Voltage

3V

Vgsth Max Id

3.9V @ 150μA

Drain To Source Voltage Vdss

40V

Maks. Çalışma Sıcaklığı

150°C

Reach Svhc

No SVHC

Rds On Max

1.4 mΩ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

96W Tc

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Gate Charge Qg Max Vgs

212nC @ 10V

Turn Off Delay Time

54 ns

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

6852pF @ 25V

Drain To Source Breakdown Voltage

40V

RoHS Durumu

RoHS Compliant

Kılıf / Paket

DirectFET™ Isometric MX

Çalışma Sıcaklığı

-55°C~150°C TJ

Radyasyon Dayanımı

No

Continuous Drain Current Id

90A

Pin Sayısı

7

Tedarikçi Cihaz Paketi

DIRECTFET™ MX

Montaj

Surface Mount

Rise Time

49ns

Rds On Max Id Vgs

1.4mOhm @ 90A, 10V

Current Continuous Drain Id25

90A Tc

Input Capacitance

6.852nF

Fall Time Typ

41 ns

Genişlik

5.05mm

Power Dissipation

96W

Yükseklik

530μm

Min. Çalışma Sıcaklığı

-55°C

Turn On Delay Time

20 ns

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

6V 10V

Montaj Tipi

Surface Mount

Drain To Source Resistance

1.4mOhm