IRF7862TRPBF

Specifications

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

8

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Direnç

3.3MOhm

Input Capacitance Ciss Max Vds

4090pF @ 15V

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

30V

Gate Charge Qg Max Vgs

45nC @ 4.5V

Turn Off Delay Time

18 ns

Power Dissipation Max

2.5W Ta

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Pozisyonu

DUAL

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Reach Svhc

No SVHC

Vgsth Max Id

2.35V @ 100μA

Yayın Yılı

2007

Seri

HEXFET®

Nominal Vgs

2.35 V

Rds On Max Id Vgs

3.7m Ω @ 20A, 10V

Rise Time

19ns

Montaj

Surface Mount

Current Continuous Drain Id25

21A Ta

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

8

Continuous Drain Current Id

21A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Power Dissipation

2.5W

Kurşunsuz

Lead Free

Genişlik

3.9878mm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

11 ns

Parça Durumu

Active

Transistor Element Material

SILICON