Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Continuous Drain Current Id
- 8.3A
- Pin Sayısı
- 8
- Pulsed Drain Currentmax Idm
- 66A
- Operating Mode
- ENHANCEMENT MODE
- Current Continuous Drain Id25
- 8.3A Ta
- Rds On Max Id Vgs
- 18m Ω @ 8.3A, 10V
- Rise Time
- 6.6ns
- Montaj
- Surface Mount
- Transistor Application
- SWITCHING
- Contact Plating
- Tin
- Radyasyon Dayanımı
- No
- Turn Off Delay Time
- 26 ns
- Gate Charge Qg Max Vgs
- 39nC @ 10V
- Direnç
- 18MOhm
- Gate To Source Voltage Vgs
- 20V
- Drain To Source Breakdown Voltage
- 100V
- Terminal Formu
- GULL WING
- Input Capacitance Ciss Max Vds
- 1640pF @ 25V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Sayısı
- 8
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2006
- Seri
- HEXFET®
- Vgsth Max Id
- 4.9V @ 100μA
- Reach Svhc
- Unknown
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Dissipation Max
- 2.5W Ta
- Number Of Elements
- 1
- Terminal Pozisyonu
- DUAL
- Ambalaj
- Tape & Reel (TR)
- Uzunluk
- 4.9784mm
- Vgs Max
- ±20V
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Yükseklik
- 1.4986mm
- Turn On Delay Time
- 13 ns
- Fet Type
- N-Channel
- Drive Voltage Max Rds On Min Rds On
- 10V
- Montaj Tipi
- Surface Mount
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