IRF7842TR

Specifications

Vgs Max

±20V

Transistor Element Material

SILICON

Yüzey Montaj

YES

Parça Durumu

Obsolete

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Jedec95 Code

MS-012AA

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.005Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Current Continuous Drain Id25

18A Ta

Rds On Max Id Vgs

5m Ω @ 17A, 10V

Ds Breakdown Voltagemin

40V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain Currentmax Abs Id

18A

Input Capacitance Ciss Max Vds

4500pF @ 20V

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

50nC @ 4.5V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

8

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

RoHS Durumu

Non-RoHS Compliant

Drain To Source Voltage Vdss

40V

Vgsth Max Id

2.25V @ 250μA

Seri

HEXFET®

Yayın Yılı

2004

Terminal Pozisyonu

DUAL

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

2.5W Ta

Jesd30 Code

R-PDSO-G8