IRF7820TRPBF

Specifications

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Surface Mount

Turn On Delay Time

7.1 ns

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

±20V

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

12 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Kurşunsuz

Lead Free

Power Dissipation

2.5W

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Ds Breakdown Voltagemin

200V

Transistor Application

SWITCHING

Montaj

Surface Mount

Rise Time

3.2ns

Rds On Max Id Vgs

78m Ω @ 2.2A, 10V

Current Continuous Drain Id25

3.7A Ta

Pin Sayısı

8

Continuous Drain Current Id

3.7A

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

DUAL

Power Dissipation Max

2.5W Ta

Nem Hassasiyeti (MSL)

1 (Unlimited)

Nominal Vgs

4 V

Seri

HEXFET®

Yayın Yılı

2012

Threshold Voltage

4V

Vgsth Max Id

5V @ 100μA

Drain To Source Voltage Vdss

200V

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Terminal Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

44nC @ 10V