Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 9.144mm
- Turn On Delay Time
- 16 ns
- Yükseklik
- 508μm
- Case Connection
- DRAIN
- Drive Voltage Max Rds On Min Rds On
- 10V
- Avalanche Energy Rating Eas
- 270 mJ
- Power Dissipation
- 125W
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 11
- Continuous Drain Current Id
- 11A
- Montaj
- Surface Mount
- Rise Time
- 19ns
- Drain Currentmax Abs Id
- 67A
- Gate To Source Voltage Vgs
- 20V
- Input Capacitance Ciss Max Vds
- 6660pF @ 25V
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 9
- Threshold Voltage
- 4V
- Yayın Yılı
- 2009
- Power Dissipation Max
- 3.3W Ta 125W Tc
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e1
- Reach Svhc
- No SVHC
- Vgs Max
- ±20V
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Montaj Tipi
- Surface Mount
- Fet Type
- N-Channel
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Genişlik
- 7.1mm
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Fall Time Typ
- 12 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- Pulsed Drain Currentmax Idm
- 270A
- Current Continuous Drain Id25
- 375A Tc
- Rds On Max Id Vgs
- 11m Ω @ 40A, 10V
- Transistor Application
- SWITCHING
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