IRF7759L2TRPBF

Specifications

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

26A

Pin Sayısı

11

Rise Time

87ns

Montaj

Surface Mount

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

12222pF @ 25V

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

9

RoHS Durumu

ROHS3 Compliant

Threshold Voltage

3V

Yayın Yılı

2009

Power Dissipation Max

3.3W Ta 125W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e1

Reach Svhc

No SVHC

Uzunluk

9.144mm

Turn On Delay Time

18 ns

Yükseklik

508μm

Case Connection

DRAIN

Avalanche Energy Rating Eas

257 mJ

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation

125W

Pulsed Drain Currentmax Idm

640A

Rds On Max Id Vgs

2.3m Ω @ 96A, 10V

Current Continuous Drain Id25

26A Ta 375A Tc

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

Drain To Source Breakdown Voltage

75V

Turn Off Delay Time

80 ns

Gate Charge Qg Max Vgs

300nC @ 10V

Kılıf / Paket

DirectFET™ Isometric L8

Vgsth Max Id

4V @ 250μA

Seri

HEXFET®

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

BOTTOM

Jesd30 Code

R-XBCC-N9

Vgs Max

±20V