IRF7606TRPBF

Specifications

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

30V

Montaj

Surface Mount

Voltage Rated Dc

-30V

Yayın Yılı

2002

Number Of Elements

1

Gate Charge Qg Max Vgs

30nC @ 10V

Turn Off Delay Time

43 ns

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Seri

HEXFET®

Uzunluk

3mm

Fall Time Typ

39 ns

Nem Hassasiyeti (MSL)

2 (1 Year)

Drain To Source Breakdown Voltage

-30V

Genişlik

3mm

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

29A

Turn On Delay Time

13 ns

Terminal Pozisyonu

DUAL

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

-3.6A

Parça Durumu

Active

Fet Type

P-Channel

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Transistor Application

SWITCHING

Current Continuous Drain Id25

3.6A Ta

Terminal Sayısı

8

Akım Değeri

-3.6A

Power Dissipation Max

1.8W Ta

Operating Mode

ENHANCEMENT MODE

Rds On Max Id Vgs

90m Ω @ 2.4A, 10V

Input Capacitance Ciss Max Vds

520pF @ 25V

Yükseklik

860μm

Element Configuration

Single

Contact Plating

Tin

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Additional Feature

LOGIC LEVEL COMPATIBLE

Vgsth Max Id

1V @ 250μA