IRF7606TR

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

90m Ω @ 2.4A, 10V

Kılıf / Paket

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Seri

HEXFET®

Input Capacitance Ciss Max Vds

520pF @ 25V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

30nC @ 10V

Yayın Yılı

2002

Voltage Rated Dc

-30V

Jesd30 Code

S-PDSO-G8

Terminal Kaplaması

Matte Tin (Sn)

Montaj

Surface Mount

Akım Değeri

-3.6A

Drain To Source Voltage Vdss

30V

RoHS Durumu

Non-RoHS Compliant

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

1.8W Ta

Number Of Elements

1

Direnç

90mOhm

Transistor Application

SWITCHING

Vgs Max

±20V

Terminal Sayısı

8

Current Continuous Drain Id25

3.6A Ta

Parça Durumu

Obsolete

Fet Type

P-Channel

Continuous Drain Current Id

-3.6A

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

20ns

Power Dissipation

1.8W

Terminal Formu

GULL WING

Kurşunsuz

Contains Lead

Terminal Pozisyonu

DUAL

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

29A

Additional Feature

LOGIC LEVEL COMPATIBLE