IRF7495TRPBF

Specifications

Seri

HEXFET®

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Reach Svhc

No SVHC

Uzunluk

4.9784mm

Tepe Reflow Süresi (maks. sn)

30

Fall Time Typ

36 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

100V

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Terminal Kaplaması

Matte Tin (Sn)

Yayın Yılı

2004

Voltage Rated Dc

100V

Gate Charge Qg Max Vgs

51nC @ 10V

Turn Off Delay Time

10 ns

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

7.3A

Fet Type

N-Channel

Parça Durumu

Active

Current Continuous Drain Id25

7.3A Ta

Terminal Sayısı

8

Transistor Application

SWITCHING

Turn On Delay Time

8.7 ns

JESD-609 Kodu

e3

Genişlik

3.9878mm

Montaj Tipi

Surface Mount

Nominal Vgs

4 V

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

1530pF @ 25V

Yükseklik

1.4986mm

Element Configuration

Single

Rds On Max Id Vgs

22m Ω @ 4.4A, 10V

Threshold Voltage

4V

Ambalaj

Tape & Reel (TR)

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Power Dissipation Max

2.5W Ta