IRF7494PBF

Specifications

Input Capacitance

1.75nF

Turn Off Delay Time

29 ns

Gate Charge Qg Max Vgs

53nC @ 10V

Number Of Elements

1

Power Dissipation Max

2.5W Ta

Drain To Source Voltage Vdss

150V

RoHS Durumu

RoHS Compliant

Yayın Yılı

2008

Montaj

Surface Mount

Ambalaj

Tube

Maks. Çalışma Sıcaklığı

150°C

Fall Time Typ

14 ns

Uzunluk

4.9784mm

Drain To Source Breakdown Voltage

150V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

HEXFET®

Input Capacitance Ciss Max Vds

1783pF @ 25V

Yükseklik

1.4986mm

Reach Svhc

No SVHC

Rds On Max Id Vgs

44mOhm @ 3.1A, 10V

Threshold Voltage

4V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Nominal Vgs

4 V

Kurşunsuz

Lead Free

Vgsth Max Id

4V @ 250μA

Turn On Delay Time

9 ns

Montaj Tipi

Surface Mount

Genişlik

3.9878mm

Current Continuous Drain Id25

5.1A Ta

Radyasyon Dayanımı

No

Rds On Max

44 mΩ

Terminal

SMD/SMT

Vgs Max

±20V

Drain To Source Resistance

44mOhm

Direnç

44MOhm

Pin Sayısı

8

Dual Supply Voltage

150V

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

10ns

Power Dissipation

3W