Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rds On Max Id Vgs
- 29m Ω @ 3.8A, 10V
- Threshold Voltage
- 4V
- Input Capacitance Ciss Max Vds
- 1680pF @ 25V
- Yükseklik
- 1.4986mm
- Maks. Çalışma Sıcaklığı
- 150°C
- Ambalaj
- Tube
- ECCN Kodu
- EAR99
- Akım Değeri
- 6.3A
- Power Dissipation Max
- 2.5W Ta
- Operating Mode
- ENHANCEMENT MODE
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation
- 2.5W
- Dual Supply Voltage
- 80V
- Rise Time
- 12ns
- Pin Sayısı
- 8
- Radyasyon Dayanımı
- No
- Vgs Max
- ±20V
- Vgsth Max Id
- 4V @ 250μA
- Kurşunsuz
- Lead Free
- Terminal Formu
- GULL WING
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Reach Svhc
- No SVHC
- Seri
- HEXFET®
- Uzunluk
- 4.9784mm
- Fall Time Typ
- 16 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 80V
- RoHS Durumu
- ROHS3 Compliant
- Terminal Kaplaması
- Matte Tin (Sn)
- Montaj
- Surface Mount
- Voltage Rated Dc
- 80V
- Yayın Yılı
- 2004
- Number Of Elements
- 1
- Avalanche Energy Rating Eas
- 96 mJ
- Drainsource On Resistancemax
- 0.029Ohm
- Row Spacing
- 6.3 mm
- Gate Charge Qg Max Vgs
- 57nC @ 10V
- Turn Off Delay Time
- 44 ns
- Gate To Source Voltage Vgs
- 20V
- Min. Çalışma Sıcaklığı
- -55°C
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