Volume pricing
- 1+ pcs$0.30
- 10+ pcs$0.29
- 100+ pcs$0.27
- 500+ pcs$0.25
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fall Time Typ
- 8.3 ns
- Uzunluk
- 4.9784mm
- Drain To Source Breakdown Voltage
- 12V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tape & Reel (TR)
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 12 Weeks
- Rds On Max Id Vgs
- 8m Ω @ 15A, 4.5V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Input Capacitance Ciss Max Vds
- 2550pF @ 6V
- Seri
- HEXFET®
- Element Configuration
- Single
- Yükseklik
- 1.4986mm
- Turn Off Delay Time
- 19 ns
- Gate Charge Qg Max Vgs
- 40nC @ 4.5V
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 2006
- Montaj
- Surface Mount
- Number Of Elements
- 1
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation Max
- 2.5W Ta
- Transistor Application
- SWITCHING
- Pin Sayısı
- 8
- Current Continuous Drain Id25
- 15A Ta
- Radyasyon Dayanımı
- No
- Vgs Max
- ±12V
- Terminal Sayısı
- 8
- Gate To Source Voltage Vgs
- 12V
- Fet Type
- N-Channel
- Parça Durumu
- Not For New Designs
- Continuous Drain Current Id
- 15A
- Rise Time
- 29ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Power Dissipation
- 2.5W
- Drive Voltage Max Rds On Min Rds On
- 2.8V 4.5V
- Terminal Formu
- GULL WING
- Terminal Pozisyonu
- DUAL
- Montaj Tipi
- Surface Mount
- Genişlik
- 3.9878mm
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