IRF7470TRPBF

Specifications

Terminal Pozisyonu

DUAL

Terminal Formu

GULL WING

Vgsth Max Id

2V @ 250μA

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

260

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

85A

Yüzey Montaj

YES

Vgs Max

±12V

Terminal Sayısı

8

Current Continuous Drain Id25

10A Ta

Ds Breakdown Voltagemin

40V

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

2.8V 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Fet Type

N-Channel

Drain Currentmax Abs Id

10A

Gate Charge Qg Max Vgs

44nC @ 4.5V

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.013Ohm

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

2.5W Ta

Avalanche Energy Rating Eas

300 mJ

Number Of Elements

1

Yayın Yılı

2003

Jesd30 Code

R-PDSO-G8

Terminal Kaplaması

Matte Tin (Sn)

Drain To Source Voltage Vdss

40V

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

30

Seri

HEXFET®

Input Capacitance Ciss Max Vds

3430pF @ 20V

Jedec95 Code

MS-012AA

Rds On Max Id Vgs

13m Ω @ 10A, 10V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)