IRF7452TRPBF

Specifications

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Terminal Kaplaması

Matte Tin (Sn)

Voltage Rated Dc

100V

Yayın Yılı

2001

Number Of Elements

1

Avalanche Energy Rating Eas

200 mJ

Drainsource On Resistancemax

0.06Ohm

Turn Off Delay Time

16 ns

Gate Charge Qg Max Vgs

50nC @ 10V

Fabrika Tedarik Süresi

14 Weeks

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Reach Svhc

No SVHC

Seri

HEXFET®

Uzunluk

4.9784mm

Fall Time Typ

13 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

100V

Genişlik

3.9878mm

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

36A

Turn On Delay Time

9.5 ns

JESD-609 Kodu

e3

Terminal Pozisyonu

DUAL

Nominal Vgs

5.5 V

Gate To Source Voltage Vgs

30V

Continuous Drain Current Id

4.5A

Parça Durumu

Not For New Designs

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Transistor Application

SWITCHING

Current Continuous Drain Id25

4.5A Ta

Terminal Sayısı

8

Akım Değeri

4.5A

Power Dissipation Max

2.5W Ta

Operating Mode

ENHANCEMENT MODE

Configuration

SINGLE WITH BUILT-IN DIODE

Threshold Voltage

5.5V

Rds On Max Id Vgs

60m Ω @ 2.7A, 10V

Input Capacitance Ciss Max Vds

930pF @ 25V