IRF7451TRPBF

Specifications

Uzunluk

4.9784mm

Fall Time Typ

15 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

150V

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Rds On Max Id Vgs

90m Ω @ 2.2A, 10V

Seri

HEXFET®

Input Capacitance Ciss Max Vds

990pF @ 25V

Yükseklik

1.4986mm

Drainsource On Resistancemax

0.09Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

41nC @ 10V

Turn Off Delay Time

17 ns

RoHS Durumu

ROHS3 Compliant

Akım Değeri

3.6A

Montaj

Surface Mount

Yayın Yılı

2004

Voltage Rated Dc

150V

Number Of Elements

1

Power Dissipation Max

2.5W Ta

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Pin Sayısı

8

Current Continuous Drain Id25

3.6A Ta

Radyasyon Dayanımı

No

Terminal Sayısı

8

Vgs Max

±30V

Gate To Source Voltage Vgs

30V

Continuous Drain Current Id

3.6A

Parça Durumu

Active

Fet Type

N-Channel

Power Dissipation

2.5W

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

4.2ns

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free