IRF7450PBF

Specifications

Drain Currentmax Abs Id

2.5A

Parça Durumu

Discontinued

Fet Type

N-Channel

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Transistor Application

SWITCHING

Current Continuous Drain Id25

2.5A Ta

Ds Breakdown Voltagemin

200V

Vgs Max

±30V

Terminal Sayısı

8

Additional Feature

AVALANCHE RATED

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

20A

Yüzey Montaj

YES

Vgsth Max Id

5.5V @ 250μA

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Terminal Pozisyonu

DUAL

Rds On Max Id Vgs

170m Ω @ 1.5A, 10V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Seri

HEXFET®

Input Capacitance Ciss Max Vds

940pF @ 25V

Jedec95 Code

MS-012AA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

200V

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2001

Terminal Kaplaması

Matte Tin (Sn)

Jesd30 Code

R-PDSO-G8

Number Of Elements

1

Avalanche Energy Rating Eas

230 mJ

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

2.5W Ta

Drainsource On Resistancemax

0.17Ohm