IRF7433PBF

Specifications

Gate Charge Qg Max Vgs

20nC @ 4.5V

Vgsth Max Id

900mV @ 250μA

Power Dissipation Max

2.5W Ta

Drain To Source Voltage Vdss

12V

Montaj Tipi

Surface Mount

Yayın Yılı

2004

Current Continuous Drain Id25

8.9A Ta

Ambalaj

Tube

Vgs Max

±8V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

HEXFET®

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

1877pF @ 10V

Drive Voltage Max Rds On Min Rds On

1.8V 4.5V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Fet Type

P-Channel

Parça Durumu

Obsolete

Rds On Max Id Vgs

24m Ω @ 8.7A, 4.5V