IRF7413ZTR

Specifications

Transistor Application

SWITCHING

Current Continuous Drain Id25

13A Ta

Ds Breakdown Voltagemin

30V

Vgs Max

±20V

Terminal Sayısı

8

Drain Currentmax Abs Id

13A

Fet Type

N-Channel

Parça Durumu

Obsolete

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Formu

GULL WING

HTS Kodu

8541.29.00.95

Terminal Pozisyonu

DUAL

Yüzey Montaj

YES

Pulsed Drain Currentmax Idm

100A

Montaj Tipi

Surface Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgsth Max Id

2.25V @ 250μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Rds On Max Id Vgs

10m Ω @ 13A, 10V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Input Capacitance Ciss Max Vds

1210pF @ 15V

Seri

HEXFET®

Jedec95 Code

MS-012AA

Drainsource On Resistancemax

0.01Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

14nC @ 4.5V

RoHS Durumu

Non-RoHS Compliant

Drain To Source Voltage Vdss

30V

Yayın Yılı

2005

Jesd30 Code

R-PDSO-G8

Number Of Elements

1

Avalanche Energy Rating Eas

32 mJ

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

2.5W Ta