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Support
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Specifications
- Parça Durumu
- Obsolete
- Fet Type
- P-Channel
- Continuous Drain Current Id
- 16A
- Gate To Source Voltage Vgs
- 8V
- Drive Voltage Max Rds On Min Rds On
- 1.8V 4.5V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 18ns
- Power Dissipation
- 2.5W
- Pin Sayısı
- 8
- Transistor Application
- SWITCHING
- Vgs Max
- ±8V
- Terminal Sayısı
- 8
- Current Continuous Drain Id25
- 16A Ta
- Radyasyon Dayanımı
- No
- Montaj Tipi
- Surface Mount
- Pulsed Drain Currentmax Idm
- 65A
- Genişlik
- 3.9878mm
- Additional Feature
- ULTRA LOW RESISTANCE
- Vgsth Max Id
- 900mV @ 250μA
- JESD-609 Kodu
- e3
- Turn On Delay Time
- 13 ns
- Terminal Formu
- GULL WING
- Terminal Pozisyonu
- DUAL
- Rds On Max Id Vgs
- 7m Ω @ 16A, 4.5V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Fabrika Tedarik Süresi
- 18 Weeks
- Element Configuration
- Single
- Yükseklik
- 1.4986mm
- Seri
- HEXFET®
- Input Capacitance Ciss Max Vds
- 8676pF @ 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- -12V
- Fall Time Typ
- 300 ns
- Uzunluk
- 4.9784mm
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Ambalaj
- Tape & Reel (TR)
- Yayın Yılı
- 2009
- Montaj
- Surface Mount
- Terminal Kaplaması
- Matte Tin (Sn)
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