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Same-day dispatch from stock
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RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation Max
- 2.5W Ta
- Operating Mode
- ENHANCEMENT MODE
- Akım Değeri
- -5.8A
- Input Capacitance Ciss Max Vds
- 1100pF @ 25V
- Yükseklik
- 1.75mm
- Element Configuration
- Single
- Threshold Voltage
- -1V
- Rds On Max Id Vgs
- 45m Ω @ 2.8A, 10V
- Ambalaj
- Tape & Reel (TR)
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Contact Plating
- Tin
- Tepe Reflow Sıcaklığı (°C)
- 260
- Vgsth Max Id
- 1V @ 250μA
- Additional Feature
- ULTRA LOW RESISTANCE
- Number Of Channels
- 1
- Kurşunsuz
- Lead Free
- Terminal Formu
- GULL WING
- Power Dissipation
- 2.5W
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 33ns
- Dual Supply Voltage
- -30V
- Max Junction Temperature Tj
- 150°C
- Radyasyon Dayanımı
- No
- Vgs Max
- ±20V
- Pin Sayısı
- 8
- Direnç
- 45mOhm
- Number Of Elements
- 1
- RoHS Durumu
- ROHS3 Compliant
- Drain To Source Voltage Vdss
- 30V
- Montaj
- Surface Mount
- Voltage Rated Dc
- -30V
- Yayın Yılı
- 2004
- Gate Charge Qg Max Vgs
- 59nC @ 10V
- Turn Off Delay Time
- 45 ns
- Row Spacing
- 6.3 mm
- Seri
- HEXFET®
- Fabrika Tedarik Süresi
- 12 Weeks
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Reach Svhc
- No SVHC
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