IRF7402TRPBF

Specifications

Yükseklik

1.4986mm

Input Capacitance Ciss Max Vds

650pF @ 15V

Seri

HEXFET®

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Rds On Max Id Vgs

35m Ω @ 4.1A, 4.5V

Fabrika Tedarik Süresi

12 Weeks

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Drain To Source Breakdown Voltage

20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

4.9784mm

Fall Time Typ

32 ns

Power Dissipation Max

2.5W Ta

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Montaj

Surface Mount

Voltage Rated Dc

20V

Yayın Yılı

1999

RoHS Durumu

ROHS3 Compliant

Akım Değeri

6.8A

Gate Charge Qg Max Vgs

22nC @ 4.5V

Turn Off Delay Time

24 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.035Ohm

Drive Voltage Max Rds On Min Rds On

2.7V 4.5V

Power Dissipation

2.5W

Rise Time

47ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

6.8A

Parça Durumu

Not For New Designs

Fet Type

N-Channel

Gate To Source Voltage Vgs

12V

Terminal Sayısı

8

Vgs Max

±12V

Radyasyon Dayanımı

No

Current Continuous Drain Id25

6.8A Ta

Pin Sayısı

8

Transistor Application

SWITCHING

Turn On Delay Time

5.1 ns

Vgsth Max Id

700mV @ 250μA