IRF7201TRPBF

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

30V

Uzunluk

4.9784mm

Fall Time Typ

19 ns

Seri

HEXFET®

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Reach Svhc

No SVHC

Fabrika Tedarik Süresi

12 Weeks

Gate Charge Qg Max Vgs

28nC @ 10V

Turn Off Delay Time

21 ns

Avalanche Energy Rating Eas

70 mJ

Number Of Elements

1

Montaj

Surface Mount

Terminal Kaplaması

Matte Tin (Sn)

Yayın Yılı

2003

Voltage Rated Dc

30V

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

8

Current Continuous Drain Id25

7.3A Tc

Transistor Application

SWITCHING

Recovery Time

73 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

7A

Fet Type

N-Channel

Parça Durumu

Active

Gate To Source Voltage Vgs

20V

Nominal Vgs

1 V

Terminal Pozisyonu

DUAL

Turn On Delay Time

7 ns

JESD-609 Kodu

e3

Genişlik

3.9878mm

Montaj Tipi

Surface Mount

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tape & Reel (TR)

Yükseklik

1.4986mm

Element Configuration

Single

Input Capacitance Ciss Max Vds

550pF @ 25V

Threshold Voltage

1V

Rds On Max Id Vgs

30m Ω @ 7.3A, 10V