IRF6898MTRPBF

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

62nC @ 4.5V

Turn Off Delay Time

24 ns

Yayın Yılı

2012

Jesd30 Code

R-XBCC-N3

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

2.1W Ta 78W Tc

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

25V

Fall Time Typ

19 ns

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Reach Svhc

No SVHC

Rds On Max Id Vgs

1.1m Ω @ 35A, 10V

Threshold Voltage

1.6V

Kılıf / Paket

DirectFET™ Isometric MX

Fabrika Tedarik Süresi

10 Weeks

Seri

HEXFET®

Input Capacitance Ciss Max Vds

5435pF @ 13V

Kurşunsuz

Lead Free

Terminal Pozisyonu

BOTTOM

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

280A

Vgsth Max Id

2.1V @ 100μA

Turn On Delay Time

18 ns

Pin Sayısı

7

Transistor Application

SWITCHING

Case Connection

DRAIN

Vgs Max

±16V

Terminal Sayısı

3

Current Continuous Drain Id25

35A Ta 213A Tc

Radyasyon Dayanımı

No

Fet Feature

Schottky Diode (Body)

Parça Durumu

Last Time Buy

Fet Type

N-Channel

Continuous Drain Current Id

35A