IRF6894MTRPBF

Specifications

Drain To Source Breakdown Voltage

25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

14 ns

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

DirectFET™ Isometric MX

Rds On Max Id Vgs

1.3m Ω @ 33A, 10V

Fabrika Tedarik Süresi

13 Weeks

Seri

HEXFET®

Input Capacitance Ciss Max Vds

4160pF @ 13V

Configuration

SINGLE WITH BUILT-IN DIODE

Turn Off Delay Time

20 ns

Gate Charge Qg Max Vgs

39nC @ 4.5V

Jesd30 Code

R-XBCC-N3

Terminal Kaplaması

Matte Tin (Sn)

Montaj

Surface Mount

Yayın Yılı

2004

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

2.1W Ta 54W Tc

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Pin Sayısı

7

Direnç

1.3MOhm

Transistor Application

SWITCHING

Case Connection

DRAIN

Terminal Sayısı

3

Vgs Max

±16V

Current Continuous Drain Id25

32A Ta 160A Tc

Radyasyon Dayanımı

No

Continuous Drain Current Id

32A

Fet Feature

Schottky Diode (Body)

Parça Durumu

Last Time Buy

Fet Type

N-Channel

Drain Currentmax Abs Id

33A

Gate To Source Voltage Vgs

16V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Power Dissipation

54W

Rise Time

42ns

Çalışma Sıcaklığı

-40°C~150°C TJ