IRF6811STRPBF

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

2.1W Ta 32W Tc

Jesd30 Code

R-XBCC-N2

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Contact Plating

Copper, Silver, Tin

Yükseklik

700μm

Input Capacitance Ciss Max Vds

1590pF @ 13V

Rds On Max Id Vgs

3.7m Ω @ 19A, 10V

Terminal Formu

NO LEAD

Kurşunsuz

Lead Free

Vgsth Max Id

2.1V @ 35μA

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Qualification Status

Not Qualified

Number Of Channels

1

Vgs Max

±16V

Direnç

3.7MOhm

Pin Sayısı

6

Çalışma Sıcaklığı

-40°C~150°C TJ

Rise Time

19ns

Power Dissipation

2.1W

Max Junction Temperature Tj

150°C

Drain Currentmax Abs Id

74A

Gate Charge Qg Max Vgs

17nC @ 4.5V

Turn Off Delay Time

11 ns

Avalanche Energy Rating Eas

32 mJ

Number Of Elements

1

Yayın Yılı

2005

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Drain To Source Breakdown Voltage

25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

5.5 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Seri

HEXFET®

Kılıf / Paket

DirectFET™ Isometric SQ

Fabrika Tedarik Süresi

13 Weeks