IRF6798MTRPBF

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.0013Ohm

Turn Off Delay Time

20 ns

Gate Charge Qg Max Vgs

75nC @ 4.5V

Yayın Yılı

2008

Jesd30 Code

R-XBCC-N3

Montaj

Surface Mount

RoHS Durumu

RoHS Compliant

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

2.8W Ta 78W Tc

Number Of Elements

1

Avalanche Energy Rating Eas

220 mJ

Drain To Source Breakdown Voltage

25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

16 ns

Uzunluk

6.35mm

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

1.3m Ω @ 37A, 10V

Kılıf / Paket

DirectFET™ Isometric MX

Yükseklik

506μm

Seri

HEXFET®

Input Capacitance Ciss Max Vds

6560pF @ 13V

Terminal Pozisyonu

BOTTOM

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

300A

Genişlik

5.05mm

Vgsth Max Id

2.35V @ 150μA

Turn On Delay Time

15 ns

Pin Sayısı

5

Transistor Application

SWITCHING

Case Connection

DRAIN

Vgs Max

±20V

Terminal Sayısı

3

Current Continuous Drain Id25

37A Ta 197A Tc

Radyasyon Dayanımı

No

Fet Feature

Schottky Diode (Body)

Parça Durumu

Obsolete

Fet Type

N-Channel