IRF6798MTR1PBF

Specifications

Gate Charge Qg Max Vgs

75nC @ 4.5V

Turn Off Delay Time

20 ns

Input Capacitance

6.56nF

Montaj

Surface Mount

Yayın Yılı

2009

RoHS Durumu

RoHS Compliant

Drain To Source Voltage Vdss

25V

Power Dissipation Max

2.8W Ta 78W Tc

Drain To Source Breakdown Voltage

25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

6.35mm

Fall Time Typ

16 ns

Maks. Çalışma Sıcaklığı

150°C

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

DirectFET™ Isometric MX

Threshold Voltage

1.8V

Rds On Max Id Vgs

1.3mOhm @ 37A, 10V

Reach Svhc

Unknown

Yükseklik

506μm

Input Capacitance Ciss Max Vds

6560pF @ 13V

Seri

HEXFET®

Kurşunsuz

Lead Free

Nominal Vgs

1.8 V

Genişlik

5.05mm

Montaj Tipi

Surface Mount

Turn On Delay Time

15 ns

Vgsth Max Id

2.35V @ 150μA

Pin Sayısı

5

Direnç

2.1MOhm

Drain To Source Resistance

2.1mOhm

Vgs Max

±20V

Rds On Max

1.3 mΩ

Radyasyon Dayanımı

No

Current Continuous Drain Id25

37A Ta 197A Tc

Continuous Drain Current Id

37A

Min. Çalışma Sıcaklığı

-40°C

Fet Feature

Schottky Diode (Body)

Fet Type

N-Channel

Parça Durumu

Obsolete

Gate To Source Voltage Vgs

20V