IRF6797MTRPBF

Specifications

Terminal Pozisyonu

BOTTOM

Turn On Delay Time

22 ns

JESD-609 Kodu

e1

Vgsth Max Id

2.35V @ 150μA

Genişlik

5.05mm

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

300A

Additional Feature

LOW CONDUCTION LOSS

Terminal Sayısı

3

Vgs Max

±20V

Radyasyon Dayanımı

No

Current Continuous Drain Id25

36A Ta 210A Tc

Pin Sayısı

7

Transistor Application

SWITCHING

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Power Dissipation

89W

Rise Time

32ns

Çalışma Sıcaklığı

-40°C~150°C TJ

Continuous Drain Current Id

36A

Fet Type

N-Channel

Parça Durumu

Active

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

68nC @ 4.5V

Turn Off Delay Time

20 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation Max

2.8W Ta 89W Tc

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

260 mJ

Number Of Elements

1

Montaj

Surface Mount

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Jesd30 Code

R-XBCC-N3

Yayın Yılı

2009

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tape & Reel (TR)

Drain To Source Breakdown Voltage

25V

Nem Hassasiyeti (MSL)

1 (Unlimited)