IRF6785MTRPBF

Specifications

Avalanche Energy Rating Eas

33 mJ

Number Of Elements

1

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Montaj

Surface Mount

Yayın Yılı

2007

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

36nC @ 10V

Turn Off Delay Time

7.2 ns

Drainsource On Resistancemax

0.1Ohm

Seri

HEXFET®

Kılıf / Paket

DirectFET™ Isometric MZ

Fabrika Tedarik Süresi

12 Weeks

Drain To Source Breakdown Voltage

200V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

6.35mm

Fall Time Typ

14 ns

Turn On Delay Time

6.2 ns

JESD-609 Kodu

e1

Genişlik

5.05mm

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

27A

Terminal Pozisyonu

BOTTOM

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

3.4A

Parça Durumu

Active

Fet Type

N-Channel

Gate To Source Voltage Vgs

20V

Terminal Sayısı

3

Current Continuous Drain Id25

3.4A Ta 19A Tc

Transistor Application

AMPLIFIER

Case Connection

DRAIN

Power Dissipation Max

2.8W Ta 57W Tc

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-XBCC-N3

Configuration

SINGLE WITH BUILT-IN DIODE

Yükseklik

506μm

Input Capacitance Ciss Max Vds

1500pF @ 25V

Rds On Max Id Vgs

100m Ω @ 4.2A, 10V

ECCN Kodu

EAR99

Transistor Element Material

SILICON