IRF6775MTRPBF

Specifications

Terminal Pozisyonu

BOTTOM

Genişlik

5.0546mm

Pulsed Drain Currentmax Idm

39A

Montaj Tipi

Surface Mount

Turn On Delay Time

5.9 ns

Vgsth Max Id

5V @ 100μA

JESD-609 Kodu

e1

Pin Sayısı

5

Case Connection

DRAIN

Transistor Application

AMPLIFIER

Terminal Sayısı

3

Vgs Max

±20V

Radyasyon Dayanımı

No

Current Continuous Drain Id25

4.9A Ta 28A Tc

Continuous Drain Current Id

4.9A

Fet Type

N-Channel

Parça Durumu

Active

Drain Currentmax Abs Id

28A

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation

2.8W

Çalışma Sıcaklığı

-40°C~150°C TJ

Rise Time

7.8ns

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

36nC @ 10V

Turn Off Delay Time

5.8 ns

Montaj

Surface Mount

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Jesd30 Code

R-XBCC-N3

Yayın Yılı

2007

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

2.8W Ta 89W Tc

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

33 mJ

Number Of Elements

1

Drain To Source Breakdown Voltage

150V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

6.35mm

Fall Time Typ

15 ns

Transistor Element Material

SILICON